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Transistors
2SC2377
Silicon NPN epitaxial planar type
For high-frequency amplification
6.90.1
(0.4)
Unit: mm
2.50.1 (1.0) (1.5)
3.50.1 (1.0) 2.00.2 2.40.2
Features
* Optimum for RF amplification of FM/AM radios * High transition frequency fT * M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board
(1.5)
R 0.9 R 0.7
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 30 20 3 15 200 150 -55 to +150 Unit V V V mA mW C C
3
1.00.1
(0.85)
1.250.05
0.450.05
0.550.1
2 (2.5)
1
(2.5)
1: Base 2: Collector 3: Emitter M-A1 Package
Electrical Characteristics Ta = 25C 3C
Parameter Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Transition frequency Noise figure Power gain Reverse transfer capacitance (Common emitter)
*
Symbol VBE ICBO ICEO IEBO hFE fT NF GP Cre
Conditions VCB = 6 V, IE = -1 mA VCB = 10 V, IE = 0 VCE = 20 V, IB = 0 VEB = 3 V, IC = 0 VCB = 6 V, IE = -1 mA VCB = 6 V, IE = -1 mA, f = 100 MHz VCB = 6 V, IE = -1 mA, f = 100 MHz VCB = 6 V, IE = -1 mA, f = 100 MHz VCB = 6 V, IE = -1 mA, f = 10.7 MHz
Min
Typ 720
Max
Unit mV
100 10 1 65 450 650 3.3 20 24 0.8 1.0 5.0 260
nA A A MHz dB dB pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE C 65 to 160 D 100 to 260
4.10.2
4.50.1
Publication date: January 2003
SJC00113BED
1
2SC2377
PC Ta
250
12
IC VCE
Ta = 25C IB = 100 A 80 A 60 A 6 40 A
IC I B
12 Ta = 25C
Collector power dissipation PC (mW)
200
10
10
Collector current IC (mA)
Collector current IC (mA)
VCE = 10 V 6V
8
8
150
6
100
4
4
50
2
20 A
2
0
0
20
40
60
80 100 120 140 160
0
0
4
8
12
16
0
0
40
80
120
160
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base current IB (A)
IC VBE
VCE = 6 V 25C Ta = 75C 20 -25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
hFE IC
360 VCE = 6 V
30
10
Forward current transfer ratio hFE
25
300
Collector current IC (mA)
240 Ta = 75C 25C 120 -25C
15
1
180
10
0.1
25C
Ta = 75C -25C
5
60
0
0
0.4
0.8
1.2
1.6
2.0
0.01 0.1
1
10
100
0 0.1
1
10
100
Base-emitter voltage VBE (V)
Collector current IC (mA)
Collector current IC (mA)
fT I E
1 200 Ta = 25C
Zrb IE
120
Cre VCE
2.4
Reverse transfer capacitance Cre (pF) (Common emitter)
Reverse transfer impedance Zrb ()
f = 2 MHz Ta = 25C 100
Transition frequency fT (MHz)
1 000 VCB = 10 V 800 6V 600
2.0
IC = 1 mA f = 10.7 MHz Ta = 25C
80
1.6
60
1.2
400
40
0.8
200
20
VCE = 6 V 10 V
0.4
0 - 0.1
-1
-10
-100
0 - 0.1
-1
-10
0 0.1
1
10
100
Emitter current IE (mA)
Emitter current IE (mA)
Collector-emitter voltage VCE (V)
2
SJC00113BED
2SC2377
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
1.2 IE = 0 f = 1 MHz Ta = 25C
GP IE
40 35 30 f = 100 MHz Rg = 50 Ta = 25C
12
NF IE
f = 100 MHz Rg = 50 k Ta = 25C
1.0
10
0.8
Noise figure NF (dB)
Power gain GP (dB)
VCE = 10 V 6V
8
25 20 15 10
0.6
6
0.4
4
VCE = 6 V, 10 V
0.2
2
5
0
0
5
10
15
20
25
30
0 - 0.1
-1
-10
-100
0 - 0.1
-1
-10
-100
Collector-base voltage VCB (V)
Emitter current IE (mA)
Emitter current IE (mA)
bie gie
20 18 yie = gie + jbie VCE = 10 V -4 mA 150
bre gre
0
bfe gfe
10.7 25
0
Forward transfer susceptance bfe (mS)
Reverse transfer susceptance bre (mS)
Input susceptance bie (mS)
16 14 12 -2 mA 100
-7 mA 100
yre = gre + jbre VCE = 10 V -1 -1 mA -4 mA IE = -7 mA
- 0.4 mA -1 mA -20 150 -40
10.7 100 -2 mA 58
25
-2 58 -3
IE = - 0.5 mA
10 8 6 4 2 0
-1 mA
58
150 f = 150 MHz IE = -7 mA
-4 mA 100 58
-60 100
58 25 25 f = 10.7 MHz
-4
100
-80
-5 f = 150 MHz - 0.4 - 0.3 - 0.2 - 0.1 0
-100
yfe = gfe + jbfe VCE = 10 V 0 20 40 60 80 100
0
3
6
9
12
15
-6 - 0.5
-120
Input conductance gie (mS)
Reverse transfer conductance gre (mS)
Forward transfer conductance gfe (mS)
boe goe
IE = - 0.5 mA -1 mA
1.2 150 -2 mA -4 mA 100
1.0
Output susceptance boe (mS)
0.8
-7 mA
0.6 58 0.4 25 0.2 f = 10.7 MHz 0 0 0.1 0.2 yoe = goe + jboe VCE = 10 V 0.3 0.4 0.5
Output conductance goe (mS)
SJC00113BED
3
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
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